(a) Define fermi level. Prove that fermi level in case of intrinsic s…
Previous year question for Advanced Engineering Physics.
Question
(a) Define fermi level. Prove that fermi level in case of intrinsic semiconductors lies at middle of the forbidden energy gap. Also discuss law of mass action for semiconductors. What is its practical utility?
(b) Find the diffusion coefficients of holes and electrons for germanium at $300\text{ K}$. The carrier mobilities in $\text{cm}^2/\text{Vs}$ at room temperature for electrons and holes are $3600$ and $1700$ respectively. Density of carriers is $2.5 \times 10^{13}/\text{cm}^2$. Use Boltzmann constant $= 1.38 \times 10^{-23}\text{ J/K}$
- Year: 2022
- Subject: Advanced Engineering Physics