(a) Explain drift and diffusion of charge carriers in semiconductors.…
Previous year question for Advanced Engineering Physics.
Question
(a) Explain drift and diffusion of charge carriers in semiconductors. Derive Einstein's relation for a P-N junction. (12)
(b) What is the concentration of holes in Silicon crystals having donor concentration of $1.4 \times 10^{24}/\text{m}^3$ when the intrinsic carrier concentration is $1.4 \times 10^{18}/\text{m}^3$? Find the ratio of electron to hole concentration. (8)
- Year: 2022
- Subject: Advanced Engineering Physics