(a) Explain the construction, working & V-I characteristics of a Tunn…
Previous year question for Basic Electronics Engineering.
Question
(a) Explain the construction, working & V-I characteristics of a Tunnel diode. (10)
(b) Explain the capacitances in the diode under forward and reverse bias conditions. Calculate the barrier capacitance of a Ge Pn junction whose area is $1 \text{ mm} \times 1 \text{ mm}$ and whose space charge thickness is $2 \times 10^{-4} \text{ cm}$. The dielectric constant of Ge is 16. (10)
- Year: 2018
- Subject: Basic Electronics Engineering