(a) Describe drift and diffusion currents and derive Einstein's relat…
Previous year question for Applied Engineering Physics.
Question
(a) Describe drift and diffusion currents and derive Einstein's relation for a P-N junction. 12
(b) The resistivity of a doped silicon material is $9 \times 10^{-3}\ \Omega\text{m}$. The Hall co-efficient is $3.6 \times 10^{-4}\ \text{m}^3/\text{C}$. Assume single carrier conduction, find the mobility and density of charge carriers. 8
- Year: 2018
- Subject: Applied Engineering Physics